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STW240NF55のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STW240NF55 |
| |
部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTW240NF55ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
STW240NF55
N-CHANNEL 55V - 0.0027 Ω - 120A TO-247
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STW240NF55
55V <0.0035Ω
www.DataSheet4U■.coTmYPICAL RDS(on) = 0.0027Ω
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
ID(1)
120A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ OR-ING FUNCTION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STW240NF55
MARKING
W240NF55
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VGS
ID(1)
ID(1)
IDM(•)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS(3)
Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1)Current Limited by Package
May 2004
PACKAGE
TO-247
PACKAGING
TUBE
Value
55
55
± 20
120
120
480
500
3.33
5
3.5
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(2) ISD ≤ 120A, di/dt ≤ 600A/µs, VDD ≤ 48V, Tj ≤ TJMAX.
(3) Starting Tj = 25 oC, ID = 60A, VDD = 30V
1/8
1 Page STW240NF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27.5 V
ID = 60 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=27.5V ID=120A VGS=10V
www.DataSheet4U.com
SWITCHING OFF
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 27.5 V
ID = 60 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Min.
Typ.
52
235
350
75
140
Typ.
225
115
Max.
480
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 120 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 120 A di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
115
435
7.6
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
3Pages STW240NF55
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ STW240NF55 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
STW240NF55 | N-CHANNEL POWER MOSFET | STMicroelectronics |