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IRG4PC30KDPBF の電気的特性と機能

IRG4PC30KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOALR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PC30KDPBF
部品説明 INSULATED GATE BIPOALR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PC30KDPBF Datasheet, IRG4PC30KDPBF PDF,ピン配置, 機能
PD -95557
IRG4PC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
www.DataSheet4U.com VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
G
E
n-channel
• Lead-Free
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC30KD2 and IRGBC30MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
1
7/26/04

1 Page





IRG4PC30KDPBF pdf, ピン配列
www.DataSheet4U.com
18
16
14
12
10
8
6
4
2
0
0.1
Square wave:
60% of rated
voltage
I
Ideal diodes
IRG4PC30KDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
100
TJ = 150 oC
10
1
0.1
1
VGE = 15V
20µs PULSE WIDTH
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
TJ = 25 oC
1
0.1
5
VCC = 50V
5µs PULSE WIDTH
10 15
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4PC30KDPBF 電子部品, 半導体
IRG4PC30KDPbF
5.0 RG = 2O3hm
T J = 150° C
VCC = 480V
4.0 VGE = 15V
www.DataSheet4U.com
3.0
2.0
1.0
0.0
0
8 16 24 32
I C , Collector-to-emitter Current (A)
40
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VGE
TJ
=
=
20V
11225oCC
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
TJ = 150°C
10 TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRG4PC30KDPBF

INSULATED GATE BIPOALR TRANSISTOR

International Rectifier
International Rectifier


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