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IRG4PC30KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOALR TRANSISTOR」です。 |
部品番号 | IRG4PC30KDPBF |
| |
部品説明 | INSULATED GATE BIPOALR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4PC30KDPBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
PD -95557
IRG4PC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
www.DataSheet4U.com VGE = 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
G
E
n-channel
Lead-Free
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
1.2
2.5
40
Units
°C/W
g (oz)
1
7/26/04
1 Page www.DataSheet4U.com
18
16
14
12
10
8
6
4
2
0
0.1
Square wave:
60% of rated
voltage
I
Ideal diodes
IRG4PC30KDPbF
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
100
TJ = 150 oC
10
1
0.1
1
VGE = 15V
20µs PULSE WIDTH
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
TJ = 25 oC
1
0.1
5
VCC = 50V
5µs PULSE WIDTH
10 15
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4PC30KDPbF
5.0 RG = 2O3hΩm
T J = 150° C
VCC = 480V
4.0 VGE = 15V
www.DataSheet4U.com
3.0
2.0
1.0
0.0
0
8 16 24 32
I C , Collector-to-emitter Current (A)
40
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VGE
TJ
=
=
20V
112255°oCC
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
TJ = 150°C
10 TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ IRG4PC30KDPBF データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
IRG4PC30KDPBF | INSULATED GATE BIPOALR TRANSISTOR | International Rectifier |