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PDF P5NC70Z Data sheet ( 特性 )

部品番号 P5NC70Z
部品説明 STP5NC70Z
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 

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P5NC70Z Datasheet, P5NC70Z PDF,ピン配置, 機能
STP5NC70Z - STP5NC70ZFP
STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8- 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NC70Z/FP
www.DataSheet4U.cSoTmB5NC70Z/-1
700V
700V
<2
<2
4.6 A
4.6 A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)5NC70Z(-1) STP5NC70ZFP
700 V
700 V
± 25 V
4.6
4.6(*)
A
2.9
2.9(*)
A
18.4 18.4 A
100 35 W
0.8 0.32 W/°C
± 50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(q )ISD 4.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed
1/12

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