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IRFU9210 の電気的特性と機能

IRFU9210のメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU9210
部品説明 Power MOSFET ( Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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IRFU9210 Datasheet, IRFU9210 PDF,ピン配置, 機能
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
8.9
2.1
3.9
Single
S
3.0
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210, SiHFR9210)
• Straight Lead (IRFU9210, SiHFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHFR9210-GE3
Lead (Pb)-free
IRFR9210PbF
SiHFR9210-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9210TR-GE3
IRFR9210TRPbFa
SiHFR9210T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 , IAS = - 1.9 A (see fig. 12).
c. ISD - 1.9 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
IPAK (TO-251)
SiHFU9210-GE3
IRFU9210PbF
SiHFU9210-E3
LIMIT
- 200
± 20
- 1.9
- 1.2
- 7.6
0.20
0.020
300
- 1.9
2.5
25
2.5
- 5.0
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0166-Rev. C, 04-Feb-13
1
Document Number: 91281
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFU9210 pdf, ピン配列
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0166-Rev. C, 04-Feb-13
3
Document Number: 91281
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFU9210 電子部品, 半導体
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
Rg
- 10 V
tp
L
D.U.T.
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. + VDS
VGS
- 3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S13-0166-Rev. C, 04-Feb-13
6
Document Number: 91281
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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