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Datasheet IRFU9120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRFU9120Power MOSFET, Transistor

IRF
IRF
mosfet
2IRFU9120P Channel Power MOSFET

IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode sili
Intersil
Intersil
mosfet
3IRFU9120Power MOSFET, Transistor

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 18 3.0 9.0 Single 0.60 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES
Vishay Siliconix
Vishay Siliconix
mosfet
4IRFU9120NPower MOSFET, Transistor

PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Description Fifth Gen
International Rectifier
International Rectifier
mosfet
5IRFU9120NPBFPower MOSFET, Transistor

PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Descriptio
International Rectifier
International Rectifier
mosfet


IRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRF-182xxInductors

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification.
Vishay Intertechnology
Vishay Intertechnology
inductor
2IRF-46Inductors Epoxy Conformal Coated

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi
Vishay Siliconix
Vishay Siliconix
inductor
3IRF034N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp
Inchange Semiconductor
Inchange Semiconductor
mosfet
4IRF034REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi
International Rectifier
International Rectifier
transistor
5IRF044N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup
Inchange Semiconductor
Inchange Semiconductor
mosfet
6IRF044N-CHANNEL POWER MOSFET

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07
Seme LAB
Seme LAB
mosfet
7IRF044REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of
International Rectifier
International Rectifier
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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