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IRFU9022 の電気的特性と機能

IRFU9022のメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU9022
部品説明 Power MOSFET ( Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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IRFU9022 Datasheet, IRFU9022 PDF,ピン配置, 機能
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
14
6.5
6.5
Single
0.33
www.DataSheet4U.com
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order as IRFR9022/SiHFR9022)
• Straight Lead Option (Order as IRFU9022/SiHFU9022) Available
• Repetitive Avalanche Ratings
RoHS*
• Dynamic dV/dt Rating
COMPLIANT
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9022/SiHFR9022 is provided on 16mm tape. The
straight lead option IRFR9022/SiHFR9022 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9022PbF
SiHFR9022-E3
SnPb
Note
a. See device orientation.
IRFR9022
SiHFR9022
DPAK (TO-252)
IRFR9022TRPbFa
SiHFR9022T-E3a
IRFR9022TRa
SiHFR9022Ta
DPAK (TO-252)
IRFR9022TRLPbFa
SiHFR9022TL-E3a
IRFR9022TRLa
SiHFR9022TLa
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
* Pb containing terminations are not RoHS compliant, exemptions may apply
IPAK (TO-251)
IRFU9022PbF
SiHFU9022-E3
IRFU9022
SiHFU9022
LIMIT
- 50
± 20
- 9.0
- 5.7
- 36
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1

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IRFU9022 pdf, ピン配列
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - - 9.9
A
- - - 40
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
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Forward Turn-On Time
VSD
TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb
-
-
- 6.3
V
trr
TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb
56
110 280
ns
Qrr 0.17 0.34 0.85 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 µs; duty cycle 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 2 - Typical Transfer Characteristics
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
Fig. 4 - Maximum Safe Operating Area
www.vishay.com
3


3Pages


IRFU9022 電子部品, 半導体
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
www.DataSheet4U.com
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
Fig. 13b - Unclamped Inductive Test Circuit
IAS
VDS
IL
VDD
tp
VDS
Fig. 13c - Unclamped Inductive Waveforms
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
www.vishay.com
6
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08

6 Page



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