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IRFU430A の電気的特性と機能

IRFU430AのメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU430A
部品説明 Power MOSFET ( Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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IRFU430A Datasheet, IRFU430A PDF,ピン配置, 機能
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
24
6.5
13
Single
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
1.7
S
G
GD S
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR430A-GE3
IRFR430APbF
SiHFR430A-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR430ATR-GE3a
IRFR430ATRPbFa
SiHFR430AT-E3a
DPAK (TO-252)
SiHFR430ATRL-GE3a
IRFR430ATRLPbFa
SiHFR430ATL-E3a
DPAK (TO-252)
SiHFR430ATRR-GE3a
IRFR430ATRRPbFa
SiHFR430ATR-E3a
IPAK (TO-251)
SiHFU430A-GE3
IRFU430APbF
SiHFU430A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 11 mH, Rg = 25 , IAS = 5.0 A (see fig. 12).
c. ISD 5.0 A, dI/dt 320 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
5.0
3.2
20
0.91
130
5.0
11
110
3.0
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S12-0168-Rev. D, 04-Feb-13
1
Document Number: 91276
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFU430A pdf, ピン配列
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS
TOP
15V
10V
8.0V
10 7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.001
0.1
4.5V
20μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
VDS = 100V
20μs PULSE WIDTH
0.01
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
10 6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.01
0.1
20μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
I D = 5.0A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
S12-0168-Rev. D, 04-Feb-13
3
Document Number: 91276
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFU430A 電子部品, 半導体
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
250
ID
TOP
2.2A
3.2A
200
BOTTOM
5.0A
150
100
50
0
25 50 75 100
Starting Tj, Junction Temperature
125
( °C)
150
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
5.0
4.5
4.0 ID = 250μA
3.5
3.0
2.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig. 12d - Threshold Voltage vs. Temperature
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S12-0168-Rev. D, 04-Feb-13
6
Document Number: 91276
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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