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PDF IRFU210 Data sheet ( Hoja de datos )

Número de pieza IRFU210
Descripción Power MOSFET ( Transistor )
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! IRFU210 Hoja de datos, Descripción, Manual

www.vishay.com
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
8.2
1.8
4.5
Single
1.5
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210, SiHFR210)
• Straight Lead (IRFU210, SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR210-GE3
IRFR210PbF
SiHFR210-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR210TRL-GE3a
IRFR210TRLPbFa
SiHFR210TL-E3a
DPAK (TO-252)
-
IRFR210TRPbFa
SiHFR210T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD 2.6 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
DPAK (TO-252)
SiHFR210TRR-GE3a
-
-
IPAK (TO-251)
SiHFU210-GE3
IRFU210PbF
SiHFU210-E3
LIMIT
200
± 20
2.6
1.7
10
0.20
0.020
95
2.7
2.5
25
2.5
5.0
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0171-Rev. E, 04-Feb-13
1
Document Number: 91268
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




IRFU210 pdf
www.vishay.com
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0171-Rev. E, 04-Feb-13
5
Document Number: 91268
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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