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IRFU210 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFU210
部品説明 Power MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 



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IRFU210 Datasheet, IRFU210 PDF,ピン配置, 機能
www.vishay.com
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
8.2
1.8
4.5
Single
1.5
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210, SiHFR210)
• Straight Lead (IRFU210, SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR210-GE3
IRFR210PbF
SiHFR210-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR210TRL-GE3a
IRFR210TRLPbFa
SiHFR210TL-E3a
DPAK (TO-252)
-
IRFR210TRPbFa
SiHFR210T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD 2.6 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
DPAK (TO-252)
SiHFR210TRR-GE3a
-
-
IPAK (TO-251)
SiHFU210-GE3
IRFU210PbF
SiHFU210-E3
LIMIT
200
± 20
2.6
1.7
10
0.20
0.020
95
2.7
2.5
25
2.5
5.0
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0171-Rev. E, 04-Feb-13
1
Document Number: 91268
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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