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IRFU1N60A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFU1N60A
部品説明 Power MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 



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IRFU1N60A Datasheet, IRFU1N60A PDF,ピン配置, 機能
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
14
2.7
8.1
Single
7.0
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
S
G
GD S
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
Halogen-free
SiHFR1N60A-GE3
Lead (Pb)-free
IRFR1N60APbF
SiHFR1N60A-E3
DPAK (TO-252)
SiHFR1N60ATRL-GE3a
IRFR1N60ATRLPbFa
SiHFR1N60ATL-E3a
DPAK (TO-252)
SiHFR1N60ATR-GE3a
IRFR1N60ATRPbFa
SiHFR1N60AT-E3a
DPAK (TO-252)
SiHFR1N60ATRR-GE3a
IRFR1N60ATRRPbFa
SiHFR1N60ATR-E3a
IPAK (TO-251)
SiHFU1N60A-GE3
IRFU1N60APbF
SiHFU1N60A-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
LIMIT
600
± 30
1.4
0.89
5.6
0.28
93
1.4
3.6
36
3.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 95 mH, Rg = 25 , IAS = 1.4 A (see fig. 12).
c. ISD 1.4 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S13-0171-Rev. D, 04-Feb-13
1
Document Number: 91267
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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