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IRFU120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFU120
部品説明 Power MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 



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IRFU120 Datasheet, IRFU120 PDF,ピン配置, 機能
www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
100
VGS = 10 V
Qg (Max.) (nC)
16
Qgs (nC)
Qgd (nC)
4.4
7.7
Configuration
Single
0.27
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
S
G
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR120, SiHFR120)
• Straight Lead (IRFU120, SiHFU120)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR120-GE3
IRFR120PbF
SiHFR120-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR120TR-GE3a
IRFR120TRPbFa
SiHFR120T-E3a
DPAK (TO-252)
SiHFR120TRR-GE3a
IRFR120TRRPbFa
SiHFR120TR-E3a
DPAK (TO-252)
SiHFR120TRL-GE3a
IRFR120TRLPbFa
SiHFR120TL-E3a
IPAK (TO-251)
SiHFU120-GE3
IRFU120PbF
SiHFU120-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 20
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0171-Rev. C, 04-Feb-13
1
Document Number: 91266
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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