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IRLZ14のメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLZ14 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Vishay Siliconix | ||
ロゴ | |||
このページの下部にプレビューとIRLZ14ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Power MOSFET
IRLZ14, SiHLZ14
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 5.0 V
8.4
3.5
6.0
Single
www.DataSheet4U.com
D
TO-220
0.20
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRLZ14PbF
SiHLZ14-E3
IRLZ14
SiHLZ14
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 793 µH, RG = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
WORK-IN-PROGRESS
LIMIT
60
± 10
10
7.2
40
0.29
68
43
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 Page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRLZ14, SiHLZ14
Vishay Siliconix
www.DataSheet4U.com
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
www.vishay.com
3
3Pages IRLZ14, SiHLZ14
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- VDD
www.DataSheet4U.comFig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
5.0 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91325
S-Pending-Rev. A, 21-Jul-08
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRLZ14 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLZ14 | Power MOSFET ( Transistor ) | International Rectifier |
IRLZ14 | Power MOSFET ( Transistor ) | Vishay Siliconix |
IRLZ14L | Power MOSFET ( Transistor ) | Vishay Siliconix |
IRLZ14S | Power MOSFET ( Transistor ) | Vishay Siliconix |