DataSheet.jp

IXGH25N100A の電気的特性と機能

IXGH25N100AのメーカーはIXYS Corporationです、この部品の機能は「High speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGH25N100A
部品説明 High speed IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




このページの下部にプレビューとIXGH25N100Aダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

IXGH25N100A Datasheet, IXGH25N100A PDF,ピン配置, 機能
Low VCE(sat)
High speed IGBT
VCES
IXGH/IXGM 25 N100 1000 V
IXGH/IXGM 25 N100A 1000 V
IC25
50 A
50 A
VCE(sat)
3.5 V
4.0 V
Symbol
www.DataSheet4U.com
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
1000
1000
±20
±30
V
V
V
V
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 33
Clamped inductive load, L = 100 µH
TC = 25°C
50
25
100
ICM = 50
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
A
A
A
A
W
°C
°C
°C
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
BVCES
V
GE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 3 mA, VGE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T
J
=
25°C
TJ = 125°C
25N100
25N100A
1000
2.5
V
5V
250 µA
1 mA
±100 nA
3.5 V
4.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
© 1996 IXYS All rights reserved
91516E (3/96)

1 Page





IXGH25N100A pdf, ピン配列
IXGH 25N100 IXGM 25N100
IXGH 25N100A IXGM 25N100A
Fig. 1 Saturation Characteristics
50
45 TJ = 25°C
40
35
30
25
20
15
www.DataSheet4U.com 10
5
0
01
VG E= 15V 13V
11V 9V
7V
2345
VCE - Volts
Fig. 2 Output Characterstics
200
180 TJ = 25°C
160
140
120
100
80
60
40
20
0
024
6
V = 15V
GE
13V
11V
9V
7V
8 10 12 14 16 18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5 IC = 50A
4
3 IC = 25A
2 IC = 12.5A
1
0
6 7 8 9 10 11 12 13 14
15
VGE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
IC = 50A
1.4
1.3
1.2
1.1
IC = 25A
1.0
0.9
0.8 IC = 12.5A
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
50
VCE = 10V
40
30
20
TJ = 25°C
10
TJ = 125°C
TJ = - 40°C
0
0 1 2 3 4 5 6 7 8 9 10
VGE - Volts
25N100g1.JN B
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2 VGE(th)
1.1 IC = 250µA
1.0
0.9
BV CES
IC = 250µA
0.8
0.7
0.6
-50 -25
0 25 50 75 100 125 150
TJ - Degrees C
© 1996 IXYS All rights reserved


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ IXGH25N100A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXGH25N100

High speed IGBT

IXYS Corporation
IXYS Corporation
IXGH25N100A

High speed IGBT

IXYS Corporation
IXYS Corporation
IXGH25N100AU1

High speed IGBT with Diode

IXYS Corporation
IXYS Corporation
IXGH25N100U1

High speed IGBT with Diode

IXYS Corporation
IXYS Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap