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IXGH25N100のメーカーはIXYS Corporationです、この部品の機能は「High speed IGBT」です。 |
部品番号 | IXGH25N100 |
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部品説明 | High speed IGBT | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXGH25N100ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Low VCE(sat)
High speed IGBT
VCES
IXGH/IXGM 25 N100 1000 V
IXGH/IXGM 25 N100A 1000 V
IC25
50 A
50 A
VCE(sat)
3.5 V
4.0 V
Symbol
www.DataSheet4U.com
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1000
1000
±20
±30
V
V
V
V
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
TC = 25°C
50
25
100
ICM = 50
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
A
A
A
A
W
°C
°C
°C
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
BVCES
V
GE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 3 mA, VGE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T
J
=
25°C
TJ = 125°C
25N100
25N100A
1000
2.5
V
5V
250 µA
1 mA
±100 nA
3.5 V
4.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l International standard packages
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for low on-state conduction losses
l High current handling capability
l MOS Gate turn-on
- drive simplicity
l Voltage rating guaranteed at high
temperature (125°C)
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l High power density
© 1996 IXYS All rights reserved
91516E (3/96)
1 Page IXGH 25N100 IXGM 25N100
IXGH 25N100A IXGM 25N100A
Fig. 1 Saturation Characteristics
50
45 TJ = 25°C
40
35
30
25
20
15
www.DataSheet4U.com 10
5
0
01
VG E= 15V 13V
11V 9V
7V
2345
VCE - Volts
Fig. 2 Output Characterstics
200
180 TJ = 25°C
160
140
120
100
80
60
40
20
0
024
6
V = 15V
GE
13V
11V
9V
7V
8 10 12 14 16 18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5 IC = 50A
4
3 IC = 25A
2 IC = 12.5A
1
0
6 7 8 9 10 11 12 13 14
15
VGE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
IC = 50A
1.4
1.3
1.2
1.1
IC = 25A
1.0
0.9
0.8 IC = 12.5A
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
50
VCE = 10V
40
30
20
TJ = 25°C
10
TJ = 125°C
TJ = - 40°C
0
0 1 2 3 4 5 6 7 8 9 10
VGE - Volts
25N100g1.JN B
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2 VGE(th)
1.1 IC = 250µA
1.0
0.9
BV CES
IC = 250µA
0.8
0.7
0.6
-50 -25
0 25 50 75 100 125 150
TJ - Degrees C
© 1996 IXYS All rights reserved
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXGH25N100 | High speed IGBT | IXYS Corporation |
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