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PDF IXGH24N60CD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH24N60CD1 | |
| Descripción | HiPerFAST IGBT | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFASTTM IGBT
with Diode
Lightspeed Series
IXGH 24N60CD1
IXGT 24N60CD1
VCES
IC25
VCE(sat)
= 600 V
= 48 A
= 2.5 V
Preliminary data
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Test Conditions
V
CES
VCGR
VGES
V
GEM
IC25
I
C110
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
T
C
= 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
T
J
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
48 A
24 A
80 A
ICM = 48
@ 0.8 VCES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
TO-247
TO-268
1.13/10 Nm/lb.in.
6g
4g
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
IC = 750 mA, VGE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C110 GE
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600 V
T
J
=
25°C
TJ = 150°C
2.5 5.5 V
200 mA
3 mA
±100 nA
2.1 2.5 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-247 and surface
mountable TO-268
• High frequency IGBT
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
• Fast recovery expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98603A (4/99)
1-5
1 page  
IXGH 24N60CD1
IXGT 24N60CD1
60
A
50
IF 40
TVJ=150°C
30
TVJ=100°C
20
TVJ=25°C
10
www.DataSheet4U.com
0
0 1 2 3V
VF
Fig. 12 Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
1000
nC
800
Qr
600
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
400
200
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
100 A/ms 1000
-diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
90
ns
trr
80
70
TVJ=100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
20
V
VFR
15
TVJ= 100°C
IF = 30A
tfr
VFR
1.00
µs
tfr
0.75
10 0.50
5 0.25
0.0
0
40 80 120 °C 160
TVJ
Fig. 15 Dynamic parameters Qr, and
IRM versus TVJ temperature
1
K/W
0.1
ZthJC
60
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 16 Recovery time trr versus -diF/dt
0 0.00
0 200 400 600 A80/m0s 1000
diF/dt
Fig. 17 Peak forward voltage V and t
FR fr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
3 0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
DSEP 29-06
0.1 s
t
1
5-5
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| PDF Descargar | [ Datasheet IXGH24N60CD1.PDF ] | |
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