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PDF APM9953 Data sheet ( Hoja de datos )

Número de pieza APM9953
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM9953 Hoja de datos, Descripción, Manual

APM9953
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-3A , RDS(ON)=75m(typ.) @ VGS=-10V
RDS(ON)=90m(typ.) @ VGS=-4.5V
Super High Dense Cell Design for Extremely
www.DataSheet4U.com Low RDS(ON)
Reliable and Rugged
SOP-8 Package
Applications
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SO 8
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Power Management in Notebook Computer ,
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Portable Equipment and Battery Powered
Systems.
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Ordering and Marking Information
P-Channel MOSFET
APM9953
APM9953 K :
H andling C ode
Temp. Range
Package Code
A P M 9953
XXXXX
Package Code
K : SO -8
O perating Junction T em p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
-20
V
±10
-3
A
-12
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
1
www.anpec.com.tw

1 page




APM9953 pdf
APM9953
Typical Characteristics
Source-Drain Diod e Forward Voltage
1102
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1
Tj=150oC
Tj=25oC
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD -Source-to-Drain Voltage (V)
Single Pulse Power

40
30
20
10
0
0.01 0.1 1 10 30
Time (sec)
Normalized Thermal TransientImpedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D= t1/t2
2.Per Unit Base=RthJA=62.5 oC/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1 1 10 30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2003
5
www.anpec.com.tw

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