DataSheet.jp

2SK214 の電気的特性と機能

2SK214のメーカーはRenesas Technologyです、この部品の機能は「(2SK213 - 2SK216) Silicon N Channel MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK214
部品説明 (2SK213 - 2SK216) Silicon N Channel MOS FET
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




このページの下部にプレビューと2SK214ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

2SK214 Datasheet, 2SK214 PDF,ピン配置, 機能
2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
www.DataSheet4U.com
Features
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
REJ03G0903-0200
(Previous: ADE-208-1241)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
D
123
S
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5

1 Page





2SK214 pdf, ピン配列
2SK213, 2SK214, 2SK215, 2SK216
Main Characteristics
Power vs. Temperature Derating
60
40
www.DataSheet4U.com
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
TC = 25°C
0.8
40 0.7
30 0.6
20 0.5
0.4
10 0.3
0.2
VGS = 0.1 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 20 V
80
60
40
20
0 0.4 0.8 1.2 1.6 2.0
Gate Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Typical Output Characteristics
500 3.5
400
TC = 25°C
3.0
2.5
300
2.0
200
1.5
100
1.0
VGS = 0.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
500
VDS = 20 V
400
300
200
100
0 12345
Gate Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
200
100
50
20
10
TC = 25°C
5 VDS = 20 V
2 5 10 20 50 100 200
Drain Current ID (mA)


3Pages


2SK214 電子部品, 半導体
www.DataSheet4U.com
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ 2SK214 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
2SK210

N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
2SK2100-01MR

Power MOSFET ( Transistor )

Fuji Electric
Fuji Electric
2SK2101-01MR

N-channel MOS-FET

Fuji Electric
Fuji Electric
2SK2103

Small switching (30V/ 2A)

ROHM Semiconductor
ROHM Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap