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2SK4108のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon N-Channel MOS Type Switching Regulator Applications」です。 |
部品番号 | 2SK4108 |
| |
部品説明 | Silicon N-Channel MOS Type Switching Regulator Applications | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK4108ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)
z High forward transfer admittance : |Yfs| = 14 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS 500 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
20 A
80 A
150 W
960 mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
20
15
150
−55~150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-06-29
1 Page ID – VDS
10 Common source 10
Tc = 25°C
Pulse Test
8
8
6
6
4
5.5
5.25
5
2
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0
0
4.5
VGS = 4V
12 3
Drain-source voltage VDS
4
(V)
5
ID – VGS
50
Common source
VDS = 20 V
Pulse Test
40
30
20
25
100 Tc = −55°C
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
2SK4108
20
10
8
16
ID – VDS
Common source
Tc = 25°C
6 Pulse Test
5.75
12
5.5
8
5.25
5
4
4.5
VGS = 4 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
VDS – VGS
20
Common source
Tc = 25°C
Pulse Test
16
12
8
ID = 20 A
4
10
5
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
100
Common source
VDS = 20 V
Pulse Test
|Yfs| – ID
Tc = −55°C
10
100
25
1.0
1
1 10 100
Drain current ID (A)
0.1
1
3
RDS (ON) – ID
Common source
Tc = 25°C
VGS = 10 V
Pulse Test
10
Drain current ID (A)
100
2007-06-29
3Pages 2SK4108
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6 2007-06-29
6 Page | |||
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