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PDF AO4438 Data sheet ( Hoja de datos )
| Número de pieza | AO4438 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4438
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4438 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4438 is Pb-free
(meets ROHS & Sony 259 specifications). AO4438L
is a Green Product ordering option. AO4438 and
AO4438L are electrically identical.
Features
VDS (V) = 60V
ID = 8.2A (VGS = 10V)
RDS(ON) < 22mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
8.2
6.6
40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
24
54
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4438.PDF ] | |
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