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IRF7220PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7220PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7220PBFダウンロード(pdfファイル)リンクがあります。 Total 7 pages
PD - 95172
IRF7220PbF
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
www.DataSheet4U.com l
l
Available in Tape & Reel
Lead-Free
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
HEXFET® Power MOSFET
1
8
A
D
2
7D
VDSS = -14V
3 6D
4 5 D RDS(on) = 0.012Ω
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
10/6/04
1 Page www.DataSheet4U.com
1000
100
VGS
TOP -4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
10
1
-1.2V
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
IRF7220PbF
1000
100
VGS
TOP -4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
10
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
-VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
1.0
VDS = -10V
250µs PULSE WIDTH
1.5 2.0
-VGS, Gate-to-Source Voltage (V)
2.5
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -11A
1.5
1.0
0.5
0.0 VGS = -4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7220PbF
www.DataSheet4U.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
DB
A5
6
E
8765
1234
H
0.25 [.010]
A
6X e
e1
A
C
y
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
DIM
INCHES
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BASIC
e 1 .025 BASIC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
8°
MILLIMET ERS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 BAS IC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
FOOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
6 www.irf.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRF7220PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7220PBF | HEXFET Power MOSFET | International Rectifier |