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IRF7220のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7220 |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7220ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
PD- 91850C
IRF7220
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -14V
3 6D
4 5 D RDS(on) = 0.012Ω
T op V ie w
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
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Parameter
Maximum Junction-to-Ambient
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
7/16/99
1 Page IRF7220
80
VGS
TOP
- 4.5V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
6 0 - 1.4V
BOTTOM - 1.2V
40
300µs PULSE W IDTH
TJ = 25°C
20
-1.2V
0A
0 2 4 6 8 10
-VD S , D ra in-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
60 VGS
TOP
- 4.5V
- 4.0V
- 3.0V
50
- 2.0V
- 1.8V
- 1.6V
- 1.4V
BO TTOM - 1.2V
40
30
300µs PULSE W IDTH
T J = 150°C
20
10
-1.2V
0A
0 2 4 6 8 10
-VD S , D rain-to-Sou rce V oltage (V )
Fig 2. Typical Output Characteristics
1000
100
TJ = 1 5 0 ° C
TJ = 25°C
10
VDS = -10V
20µs PULS E W ID TH
1A
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
-VGS , G ate -to -S ource V o lta ge (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = -11A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7220
SO-8 Package Details
D
-B- 5
5E
-A-
87 65
12 34
θ
H
0.25 (.010) M A M
e
6X e1
θ K x 45°
A
-C -
B 8X
A1
0.10 (.004)
L6
8X
C
8X
0.25 (.010) M C A S B S
NOTES:
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
6 D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O A S U B S TR A TE ..
IN C H ES M ILLIM E T ER S
D IM
M IN M AX M IN M AX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .05 0 B ASIC 1.27 BA SIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ 0° 8°
0° 8°
R EC O M M EN D ED FO O TPR INT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.0 70 )
8X
Part Marking
6 www.irf.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRF7220 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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