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IRF7220 の電気的特性と機能

IRF7220のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7220
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7220 Datasheet, IRF7220 PDF,ピン配置, 機能
PD- 91850C
IRF7220
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -14V
3 6D
4 5 D RDS(on) = 0.012
T op V ie w
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
7/16/99

1 Page





IRF7220 pdf, ピン配列
IRF7220
80
VGS
TOP
- 4.5V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
6 0 - 1.4V
BOTTOM - 1.2V
40
300µs PULSE W IDTH
TJ = 25°C
20
-1.2V
0A
0 2 4 6 8 10
-VD S , D ra in-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
60 VGS
TOP
- 4.5V
- 4.0V
- 3.0V
50
- 2.0V
- 1.8V
- 1.6V
- 1.4V
BO TTOM - 1.2V
40
30
300µs PULSE W IDTH
T J = 150°C
20
10
-1.2V
0A
0 2 4 6 8 10
-VD S , D rain-to-Sou rce V oltage (V )
Fig 2. Typical Output Characteristics
1000
100
TJ = 1 5 0 ° C
TJ = 25°C
10
VDS = -10V
20µs PULS E W ID TH
1A
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
-VGS , G ate -to -S ource V o lta ge (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -11A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7220 電子部品, 半導体
IRF7220
SO-8 Package Details
D
-B- 5
5E
-A-
87 65
12 34
θ
H
0.25 (.010) M A M
e
6X e1
θ K x 45°
A
-C -
B 8X
A1
0.10 (.004)
L6
8X
C
8X
0.25 (.010) M C A S B S
NOTES:
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
6 D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O A S U B S TR A TE ..
IN C H ES M ILLIM E T ER S
D IM
M IN M AX M IN M AX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .05 0 B ASIC 1.27 BA SIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ 0° 8°
0° 8°
R EC O M M EN D ED FO O TPR INT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.0 70 )
8X
Part Marking
6 www.irf.com

6 Page



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Link :


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