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G4PH50UDのメーカーはInternational Rectifierです、この部品の機能は「IRG4PH50UD」です。 |
部品番号 | G4PH50UD |
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部品説明 | IRG4PH50UD | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとG4PH50UDダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
www.DataSheet4U.com >200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
45
24
180
180
16
180
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000
1 Page 30
25
www.DataSheet4U.com
20
15
10
5
S qua re wave:
60% of rated
v olta ge
I
Ideal diodes
0
0.1
IRG4PH50UD
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 40W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4PH50UD
15 RG = O5.h0mΩ
T J = 150 °C
VCC = 480V
12 VGE = 15V
www.DataSheet4U.com
9
6
3
1000
VGE = 20V
T J = 125 oC
100
10
0
0 10 20 30 40
I C, Collector-to-emitter Current (A)
50
SAFE
1
OPERATING
AREA
1 10 100
1000
VCE, Collector-to-Emitter Voltage (V)
10000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
Fig. 12 - Turn-Off SOA
100
TJ = 150°C
10 TJ = 125°C
TJ = 25°C
1
0.0 2.0 4.0 6.0 8.0
Forward V oltage D rop - V FM (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
G4PH50UD | IRG4PH50UD | International Rectifier |