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PDF SPD07N60C2 Data sheet ( Hoja de datos )
| Número de pieza | SPD07N60C2 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
www.DataShee•t4UP.ceormiodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
P-TO251
SPD07N60C2
SPU07N60C2
Product Summary
VDS 600 V
RDS(on) 0.6 Ω
ID 7.3 A
P-TO252
Type
SPD07N60C2
SPU07N60C2
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4312
Q67040-S4311
Marking
07N60C2
07N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
ID
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.3A, VDD=50V
ID puls
EAS
EAR
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IAR
dv/dt
IS=7.3A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation, TC = 25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
Value
7.3
4.6
14.6
230
0.5
7.3
6
±20
83
-55... +150
Unit
A
mJ
A
V/ns
V
W
°C
Page 1
2002-10-07
1 page  
Final data
SPD07N60C2
SPU07N60C2
1 Power dissipation
Ptot = f (TC)
100 SPD07N60C2
W
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
www.DataSheet4U.com80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
DC
10
-2
10
0
10 1
10 2
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
25
V 10 3
VDS
20V
A
12V
15
10 -1
D = 0.5
D = 0.2
D = 0.1
10
D = 0.05
10 -2
D = 0.02
D = 0.01
single pulse
5
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
Page 5
0
0
10V
9V
8V
7V
5 10 15 V 25
VDS
2002-10-07
5 Page 
Final data
SPD07N60C2
SPU07N60C2
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
www.DataSheeAt4Utt.ecnomtion please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2002-10-07
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SPD07N60C2.PDF ] | |
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