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H7N0607DL PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H7N0607DL
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 



Total 9 pages
		

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H7N0607DL Datasheet, H7N0607DL PDF,ピン配置, 機能
H7N0607DL, H7N0607DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 26 mtyp.
www.DataSheet4U.cLoomw drive current.
Capable of 4.5 V gate drive
Outline
REJ03G0124-0300
Rev.3.00
Jan.27.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
G 3. Source
12 3
4. Drain
S
12 3
H7N0607DS
H7N0607DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note3
EAR Note3
PchNote2
Tch
Tstg
Rating
60
±20
20
80
20
8
5.48
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mj
W
°C
°C
Rev.3.00, Jan.27.2005, page 1 of 8

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