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H7N0603DS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H7N0603DS
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 



Total 9 pages
		

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H7N0603DS Datasheet, H7N0603DS PDF,ピン配置, 機能
H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
Low on - resistance
RDS (on) = 11 mtyp.
www.DataSheet4U.cLoomw drive current
Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
3. Source
G
12 3
4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8

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