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H7N0603DS の電気的特性と機能

H7N0603DSのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 H7N0603DS
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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Total 9 pages

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H7N0603DS Datasheet, H7N0603DS PDF,ピン配置, 機能
H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
Low on - resistance
RDS (on) = 11 mtyp.
www.DataSheet4U.cLoomw drive current
Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
3. Source
G
12 3
4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8

1 Page





H7N0603DS pdf, ピン配列
H7N0603DL, H7N0603DS
Main Characteristics
Power vs. Tmperature Derating
50
40
30
20
www.DataSheet4U.com 10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characterristics
50
VGS = 10 V
Pulse Test
5.0 V
40
4.5 V
4.0 V
30
3.5 V
20
10
3V
2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
ID = 20 A
200
10 A
100
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
1000
Maximum Safe Operation Area
300
100
30
10 DC Operation
(Tc = 25°C)
3
1001µ0sµs
1 PW = 10 ms
(1 shot)
0.3 Operation in
0.1 this area is
limited by RDS(on)
0.03
0.01 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Trasfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
150°C
10
25°C
Tc=–40°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source State Resistance
vs. Drain Current
100
Pulse Test
30
VGS = 4.5 V
10
10 V
3
1
1
3
10 30
100
Drain Current ID (A)
Rev.2.00, Jan.26.2005, page 3 of 8


3Pages


H7N0603DS 電子部品, 半導体
H7N0603DL, H7N0603DS
Switching Time Test circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
www.DataSheet4U.com
Switching Time Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.2.00, Jan.26.2005, page 6 of 8

6 Page



ページ 合計 : 9 ページ
 
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[ H7N0603DS データシート.PDF ]


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部品番号部品説明メーカ
H7N0603DL

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology
H7N0603DS

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology


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