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H7N0602LDのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。 |
部品番号 | H7N0602LD |
| |
部品説明 | Silicon N Channel MOS FET High Speed Power Switching | ||
メーカ | Renesas Technology | ||
ロゴ | |||
このページの下部にプレビューとH7N0602LDダウンロード(pdfファイル)リンクがあります。 Total 9 pages
H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1130-0600
Rev.6.00
Oct 16, 2006
Features
• Low on-resistance
RDS (on) = 4.1 mΩ typ.
www.DataSheet•4U.c4o.5mV gate drive devices
• High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0602LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
H7N0602LS
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0602LM
S
Rev.6.00 Oct 16, 2006 page 1 of 8
1 Page H7N0602LD, H7N0602LS, H7N0602LM
Main Characteristics
Power vs. Temperature Derating
160
120
80
www.DataSheet4U.com
40
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
200
10 V
6V
160
Pulse Test
4.5 V
120 4 V
80
3.5 V
40
VGS = 3 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200 ID = 50 A
100 20 A
10 A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.6.00 Oct 16, 2006 page 3 of 8
Maximum Safe Operation Area
1000
300
100
1 ms
100
10
µs
µs
30
DC Operation
10 (Tc = 25°C)
3 Operation in
this area is
1 limited by RDS(on)
0.3
Ta = 25°C
0.1
0.1 0.3 1
PW = 10 ms
(1shot)
3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
200
VDS = 10 V
Pulse Test
160
120
80
40 Tc = 75°C
25°C
–25°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
3 10 V
1
1 3 10 30 100 300 1000
Drain Current ID (A)
3Pages H7N0602LD, H7N0602LS, H7N0602LM
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
www.DataSheet4U.com
Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.6.00 Oct 16, 2006 page 6 of 8
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ H7N0602LD データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
H7N0602LD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0602LM | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0602LS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |