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H7N0311LSのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。 |
部品番号 | H7N0311LS |
| |
部品説明 | Silicon N Channel MOS FET High Speed Power Switching | ||
メーカ | Renesas Technology | ||
ロゴ | |||
このページの下部にプレビューとH7N0311LSダウンロード(pdfファイル)リンクがあります。 Total 8 pages
H7N0311LD, H7N0311LS, H7N0311LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1126-0500
(Previous: ADE-208-1423C)
Rev.5.00
Apr 07, 2006
Features
• Low on-resistance
www.DataSheet4U.cRoDmS (on) = 7.0 mΩ typ.
• Low drive current
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0311LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0311LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0311LM
S
Rev.5.00 Apr 07, 2006 page 1 of 7
1 Page H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
www.DataSheet4U.com
20
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
4V
Pulse Test
30 3.5 V
20
VGS = 3 V
10
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4 ID = 50 A
0.2 20 A
10 A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
10
1
1 ms
DC OperatioPnW = 10
Operation in
100
ms
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS = 5 V
10
5 10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
3Pages H7N0311LD, H7N0311LS, H7N0311LM
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
Previous Code MASS[Typ.]
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
1.40g
www.DataSheet4U.com
10.2 ± 0.3
2.54 ± 0.5
1.3 ± 0.2
1.37 ± 0.2
0.86
+
–
0.2
0.1
0.76 ± 0.1
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
Unit: mm
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V
1.30g
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Unit: mm
Rev.5.00 Apr 07, 2006 page 6 of 7
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ H7N0311LS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
H7N0311LD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0311LM | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0311LS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |