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H7N0310LM の電気的特性と機能

H7N0310LMのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 H7N0310LM
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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H7N0310LM Datasheet, H7N0310LM PDF,ピン配置, 機能
H7N0310LD, H7N0310LS, H7N0310LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1125-0500
(Previous: ADE-208-1422C)
Rev.5.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 8 mtyp.
Low drive current
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0310LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0310LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0310LM
S
Rev.5.00 Apr 07, 2006 page 1 of 7

1 Page





H7N0310LM pdf, ピン配列
H7N0310LD, H7N0310LS, H7N0310LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
www.DataSheet4U.com
20
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
40 6 V
4V
Pulse Test
30 3.5 V
20
VGS = 3 V
10
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2 ID = 20 A
0.1 10 A
5A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100 1 ms 100 µs
10
1
DC
Operation
iOnperatPioWn
=
10
ms
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS = 5 V
10
5 10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)


3Pages


H7N0310LM 電子部品, 半導体
H7N0310LD, H7N0310LS, H7N0310LM
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
Previous Code MASS[Typ.]
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
1.40g
www.DataSheet4U.com
10.2 ± 0.3
2.54 ± 0.5
1.3 ± 0.2
1.37 ± 0.2
0.86
+
0.2
0.1
0.76 ± 0.1
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
Unit: mm
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V
1.30g
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Unit: mm
Rev.5.00 Apr 07, 2006 page 6 of 7

6 Page



ページ 合計 : 8 ページ
 
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[ H7N0310LM データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
H7N0310LD

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology
H7N0310LM

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology
H7N0310LS

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology


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