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H7N1004DL の電気的特性と機能

H7N1004DLのメーカーはRenesas Technologyです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 H7N1004DL
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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H7N1004DL Datasheet, H7N1004DL PDF,ピン配置, 機能
H7N1004DL, H7N1004DS
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
Low on-resistance
RDS(on) = 25 mtyp.
www.DataSheet4U.cLoomw drive current
Available for 4.5 V gate drive
Outline
REJ03G1482-0100
Rev.1.00
Nov 07, 2006
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-2)
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK-(S))
D
12 3
H7N0607DL
12 3
H7N0607DS
G
S
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
100
±20
25
75
75
15
22.5
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00 Nov 07, 2006 page 1 of 8

1 Page





H7N1004DL pdf, ピン配列
H7N1004DL, H7N1004DS
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
Pulse Test
4V
30
3.5 V
20
10
VGS = 3 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
ID = 20 A
0.4
10 A
0.2 5 A
0
0 5 10 15 20
Gate to Source Voltage VGS (V)
Rev.1.00 Nov 07, 2006 page 3 of 8
Maximum Safe Operation Area
1000
300
100
30
10
3
1
(TcDPC=W2O5=p°eC1r0)amtios1n(m1 sshot)10100µµss
0.3 Operation in
0.1
this area is
limited by RDS (on)
0.03
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = –25°C
10 25°C
75°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50 VGS = 4.5 V
20 10 V
10
5
12
5 10 20 50 100
Drain Current ID (A)


3Pages


H7N1004DL 電子部品, 半導体
H7N1004DL, H7N1004DS
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
www.DataSheet4U.com
Switching Time Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.1.00 Nov 07, 2006 page 6 of 8

6 Page



ページ 合計 : 9 ページ
 
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[ H7N1004DL データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
H7N1004DL

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology
H7N1004DS

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology
Renesas Technology


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