(PDF) H7N1002AB Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H7N1002AB
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H7N1002AB Silicon N Channel MOS FET High Speed Power Switching www.DataSheet4U.com Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB REJ03G0130-0200Z Rev.2.00 Oct.30.2003 D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 1 page H7N1002AB Drain to Source Saturation Voltage VS. Gate to Source Voltage 1.0 Pulse Test 0.8 www.DataSheet4U.com 0.6 0.4 ID = 50 A 0.2 20 A 10 A 0 5 10 15 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 VGS = 4.5 V 10 V 5 2 1 0.5 2 5 10 20 50 100 200 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test 32 24 50 A ID = 10 A, 20 A 16 VGS = 4.5 V 8 50 A 10 A, 20 A 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 200 100 Tc = –25°C 10 1 0.1 0.02 0.01 25°C 75°C VDS = 10 V Pulse Test 0.1 1 10 Drain Current ID (A) 100 Rev.2.00, Oct.30.2003, page 5 of 9 5 Page

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PDF H7N1002AB Data sheet ( Hoja de datos )