|
|
Datasheet UPG2118K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | UPG2118K | 1.5W GaAs MMIC POWER AMPLIFIER NEC's 1.5W GaAs MMIC POWER AMPLIFIER
FEATURES
• E-MODE HJ-FET TECHNOLOGY • SINGLE +3.2V POWER SUPPLY • HIGH EFFICIENCY: PAE = 42% MIN • HIGH SATURATED POWER: Pout = +31.5 dBm MIN
UPG2118K
DESCRIPTION
NEC's UPG2118K is a 1.5W, 3 stage power amplifier developed primarily |  CEL | amplifier |
UPG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | UPG100P | WIDE BAND AMPLIFIER CHIPS DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers.
available in chip form. Both devices are
PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a me  NEC amplifier | | |
| 2 | UPG101P | WIDE BAND AMPLIFIER CHIPS DATA SHEET SHEET DATA
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers.
available in chip form. Both devices are
PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a me NEC amplifier | | |
| 3 | UPG103B | WIDE-BAND AMPLIFIER DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG103B
WIDE-BAND AMPLIFIER
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.
This device is most suitable for the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : f = 50 MHz to NEC amplifier | | |
| 4 | UPG110B | 2-8 GHZ WIDE-BAND AMPLIFIER
2-8 GHz WIDE-BAND AMPLIFIER
UPG110B UPG110P
FEATURES
• WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
• HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB)
GAIN v NEC amplifier | | |
| 5 | UPG110P | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high g NEC amplifier | | |
| 6 | UPG130G | L-BAND SPDT SWITCH DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG133G
L-BAND SPDT SWITCH
DESCRIPTION
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion los NEC data | | |
| 7 | UPG130G | L-BAND SPDT SWITCH DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG133G
L-BAND SPDT SWITCH
DESCRIPTION
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion los NEC data | |
| Esta página es del resultado de búsqueda del UPG2118K. Si pulsa el resultado de búsqueda de UPG2118K se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |