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STU11NC60 の電気的特性と機能

STU11NC60のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU11NC60
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STU11NC60 Datasheet, STU11NC60 PDF,ピン配置, 機能
STU11NC60
N-CHANNEL 600V - 0.48- 11A Max220
PowerMeshII MOSFET
TYPE
VDSS
RDS(on)
ID
STU11NC60
600V
< 0.55
11 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLIES (UPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
12
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
Value
600
600
±30
11
8
44
160
1.28
4.5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 11A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
June 2000
1/8

1 Page





STU11NC60 pdf, ピン配列
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd
www.DataSheet4U.com
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 300V, ID = 6 A
RG = 4.7, VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 12 A,
VGS = 10V, RG = 4.7
Test Conditions
VDD = 480V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STU11NC60
Min.
Typ.
20
15
65
13
28
Max.
90
Unit
ns
ns
nC
nC
nC
Min.
Typ.
14
25
30
Max.
Unit
ns
ns
ns
Min.
Typ.
590
5.6
19
Max.
11
44
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STU11NC60 電子部品, 半導体
STU11NC60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



ページ 合計 : 8 ページ
 
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部品番号部品説明メーカ
STU11NC60

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics


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