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PDF STD10NM65N Data sheet ( Hoja de datos )
| Número de pieza | STD10NM65N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
(@Tjmax) max
ID
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
710 V
710 V
710 V
710 V
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
9A
9 A(1)
9A
9A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
Marking
10NM65N
10NM65N
10NM65N
10NM65N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tube
Tube
Tube
February 2008
Rev 2
1/17
www.st.com
17
1 page  
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
www.DataSheet4U.com
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 325 V, ID = 4.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min Typ Max Unit
12 ns
8 ns
50 ns
20 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, VGS = 0
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ Max Unit
9A
36 A
1.3 V
330 ns
3 µC
19 A
430 ns
4 µC
19 A
5/17
5 Page 
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STD10NM65N.PDF ] | |
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