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STD45NF03LのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STD45NF03L |
| |
部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD45NF03Lダウンロード(pdfファイル)リンクがあります。 Total 6 pages
® STD45NF03L
N - CHANNEL 30V - 0.011 Ω - 45A DPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD45NF03L 30 V
< 0.013 Ω
45 A
www.DataSheet4Us.comTYPICAL RDS(on) = 0.011 Ω
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
30
30
VG S
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
45
31.5
180
55
Derating Factor
0.37
EAS (1) Single Pulse Avalanche Energy
200
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 oC, ID = 22.5A , VDD = 20V
September 1999
Unit
V
V
V
A
A
A
W
W /o C
mJ
oC
oC
1/6
1 Page STD45NF03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
www.DataSheet4U.com
SWITCHING OFF
Test Conditions
VDD = 15 V
ID = 22.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 22.5 A VGS = 5 V
Min.
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 22.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
40
250
43
12
21
Typ.
60
70
Max.
58
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM (•)
VSD (∗)
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 45 A VGS = 0
ISD = 45 A
VDD = 15 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
45
180
1.5
75
100
2.6
Unit
A
A
V
ns
nC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
3Pages STD45NF03L
www.DataSheet4U.com
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all informaiton previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6 .
6 Page | |||
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部品番号 | 部品説明 | メーカ |
STD45NF03L | N-CHANNEL POWER MOSFET | STMicroelectronics |