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06N03のメーカーはPan Jit Internationalです、この部品の機能は「25V N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | 06N03 |
| |
部品説明 | 25V N-Channel Enhancement Mode MOSFET | ||
メーカ | Pan Jit International | ||
ロゴ | |||
このページの下部にプレビューと06N03ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PJD06N03
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ
• RDS(ON), VGS@4.5V,IDS@30A=9mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
www.DataSheet4•US.cpoemcially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06N03
TO-252
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
T ,T
J STG
EAS
RθJ C
RθJ A
Limit
25
+20
60
280
62.5
37.5
-55 to + 150
180
2.0
50
Uni ts
V
V
A
A
W
OC
mJ
O C /W
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1
1 Page PJD06N03
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
100
80
www.DataSheet4U.com
60
40
20
0
0
VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V
3.5V
3.0V
2.5V
1234
VDS - Drain-to-Source Voltage (V)
5
Fig. 1F-TIYGP.1IC-ALOFuOtpRuWtARCDhCaHraAcRteArCisTtEicRISTIC
80
VDS=10V
60
40
20
0
1.5
TJ=125OC
TJ=25OC
TJ=-55OC
2 2.5 3 3.5 4
VGS - Gate-to-Source Voltage (V)
4.5
FIG.2- Transfer Characteristic
15
12
9 VGS=4.5V
6
VGS=10V
3
0
0 10 20 30 40 50 60 70 80 90
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.4
VGS=10V
1.3 ID=30A
1.2
1.1
1
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125
TJ - Junction Tem perature (oC)
150
FIG.5- On Resistance vs Junction Temperature
STAD-JUL.19.2006
30
ID=30A
25
20
15
10 TJ=125OC
5
TJ=25OC
0
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
PAGE . 3
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 06N03 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
06N02C | N-Channel Enhancement Mode Power MOSFET | FNK |
06N03 | 25V N-Channel Enhancement Mode MOSFET | Pan Jit International |
06N03LA | IPB06N03LA | Infineon Technologies Corporation |