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IRF7457PBF の電気的特性と機能

IRF7457PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7457PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7457PBF Datasheet, IRF7457PBF PDF,ピン配置, 機能
PD- 95032
SMPS MOSFET
IRF7457PbF
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
www.DataSheet4U.com l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max ID
7.0m
15A
Benefits
l Ultra-Low RDS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Max.
20
± 20
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 8
www.irf.com
1
10/12/04

1 Page





IRF7457PBF pdf, ピン配列
IRF7457PbF
www.DataSheet4U.com
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
1 TJ = 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
1 TJ= 150 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
2.5
VDS= 15V
20µs PULSE WIDTH
3.0 3.5 4.0 4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 15A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7457PBF 電子部品, 半導体
IRF7457PbF
0.030
0.020
0.025
www.DataSheet4U.com
0.020
0.015
0.010
0.005
0.000
0
VGS = 4.5V
VGS = 10V
20 40 60 80 100
ID , Drain Current ( A )
120
0.018
0.016
0.014
0.012
0.010
0.008
0.006
3.0
ID = 15A
3.5 4.0 4.5 5.0
VGS, Gate -to -Source Voltage (V)
5.5
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14. On-Resistance Vs. Gate Voltage
700 ID
TOP
5.4A
600 9.6A
BOTTOM 12A
500
400
300
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
15V
DRIVER
+
-
VDD
A
200
100
0
25 50 75 100 125 150
Starting TJ, Junction Temperature ( °C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF7457PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7457PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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