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PDF 02N60S5 Data sheet ( Hoja de datos )
| Número de pieza | 02N60S5 | |
| Descripción | SPN02N60S5 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 02N60S5 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
www.DataShee•t4UU.clotrma low effective capacitances
• Improved transconductance
SPN02N60S5
VDS
RDS(on)
ID
600 V
3Ω
0.4 A
SOT-223
4
3
2
1 VPS05163
Type
SPN02N60S5
Package
SOT-223
Ordering Code
Q67040-S4207
Marking
02N60S5
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current, tp limited by Tjmax
TA = 25 °C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
Operating and storage temperature
Symbol
ID
ID puls
VGS
VGS
Ptot
Tj , Tstg
Value
0.4
0.3
2.2
±20
±30
1.8
-55... +150
Unit
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30
1 page  
SPN02N60S5
1 Power dissipation
Ptot = f (TA)
1.9 SPN02N60S5
W
www.DataSheet4U.com1.6
1.4
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA=25°C
10 1
A
10 0
1.2
1 10 -1
0.8
0.6
tp = 0.001 ms
10 -2
tp = 0.01 ms
tp = 0.1 ms
0.4 tp = 1 ms
tp = 10 ms
0.2 DC
00 20 40 60 80 100 120 °C 160
TA
10
-3
10
0
10 1
10 2 V 10 3
VDS
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 2
K/W
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
4
A
10 1
10 0
10 -1
10 -2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
3
9V
2.5
2
8V
1.5
1 7V
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
Rev. 2.1
Page 5
0.5
6V
00 4 8 12 16 20 V 28
VDS
2004-03-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 02N60S5.PDF ] | |
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| 02N60S5 | SPN02N60S5 | Infineon Technologies |
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