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20GF120BR の電気的特性と機能

20GF120BRのメーカーはAdvanced Power Technologyです、この部品の機能は「APT20GF120BR」です。


製品の詳細 ( Datasheet PDF )

部品番号 20GF120BR
部品説明 APT20GF120BR
メーカ Advanced Power Technology
ロゴ Advanced Power Technology ロゴ 




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20GF120BR Datasheet, 20GF120BR PDF,ピン配置, 機能
APT20GF120BR
APT20GF120BR
1200V 32A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
• Low Forward Voltage Drop
www.DataSheet4LUo.cwomTail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
G
C
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT20GF120BR
UNIT
VCES
VCGR
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
±20
32
20
64
40
22
200
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)
Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.8
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
mA
nA
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

1 Page





20GF120BR pdf, ピン配列
APT20GF120BR
50
40
VGE=17 & 15V
13V
50
VGE=17 & 15V
13V
40
30 30
11V 11V
20 20
10
9V
www.DataSheet4U.com
0 7V
0 4 8 12 16 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
60
250µSec. Pulse Test
VGE = 15V
40 TC=-55°C
TC=+25°C
30 TC=+150°C
20
10
0
02 4 68
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
2,000
1,000
500
Cies
100
f = 1MHz
Coes
50 Cres
10 9V
0 7V
0 4 8 12 16 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (TJ = 150°C)
100
50 OPERATION
LIMITED
BY
VCE (SAT)
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1mS
1
1
5 10
50 100
1200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
10mS
20
IC = IC2
TJ = +25°C
16
12 VCE=240V
8
VCE=600V
4
10
0.01 0.1 1.0 10 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
0.5
D=0.5
0
0 40 80 120 160
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.1
0.05
0.01
0.005
0.00110-5
0.2
0.1
0.05
0.02
0.01
Note:
t1
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10


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共有リンク

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部品番号部品説明メーカ
20GF120BR

APT20GF120BR

Advanced Power Technology
Advanced Power Technology


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