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PDF IXGH16N170 Data sheet ( Hoja de datos )
| Número de pieza | IXGH16N170 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS Corporation | |
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High Voltage
IGBT
Advance Technical Data
IXGH 16N170
IXGT 16N170
VCES
I
C25
VCE(sat)
tfi(typ)
= 1700 V
= 32 A
= 3.5 V
= 290 ns
Symbol
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VCES
VCGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Maximum Ratings
1700
1700
V
V
VGES
VGEM
Continuous
Transient
±20 V
±30 V
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
32 A
16 A
80 A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 40
@ 0.8 VCES
A
PC TC = 25°C
190 W
TJ
-55 ... +150
°C
TJM 150 °C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Md
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
1700
3.0
5.0
50
500
±100
2.7 3.5
3.3
V
V
µA
µA
nA
V
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
C (TAB)
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS98996(01/03)
1 page | ||
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