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PDF 1N60 Data sheet ( Hoja de datos )
| Número de pieza | 1N60 | |
| Descripción | SMALL SIGNAL SCHOTTKY DIODE | |
| Fabricantes | BL | |
| Logotipo |  |
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 1. - 50V, Germanium Glass Diode  Hay una vista previa y un enlace de descarga de 1N60 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BL GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODE
FEATURES
Metal s illicon junction m ajority carrier conduction
High current capability,low forward voltage drop
Extrem ely low revers e current IR
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
ffffff characteris tics
Satis factory wave detection efficiency
www.DataSheFeot4rUu.scoemin RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
VOLTAGE RANGE: 40V
CURRENT: 0.03 A
DO - 35(GLASS)
1N60
ABSOLUTE RATINGS(LIMITING VALUES)
Parameters
Repetitive peak reverse voltage
Forw ard continuous current
Peak f orw ard surge current (t=Is)
TA=25
Storage and junction temperature range
Maximum lead temperature f or soldering during 10s at 4mm f rom case
Symbols
VRRM
IF
IF S M
TSTG/TJ
TL
Value
1N60
40.0
30.0
150.0
XX- 55 ---- + 150
230
UNITS
V
mA
mA
ELECTRICAL CHARACTERISTICS
Parameters
Symbols
Test Conditions
Forward voltage
Reverse current
Junction capacitance
Detection efficiency (See FIG. 4)
Reverse recovery time
Therm al res is tance,junction to am bient
VF
IR
CJ
trr
RθJA
IF=1m A
1N 6 0
IF=30m A
1N 6 0
VR = 1 5 V
1N 6 0
VR=1V f=1MHz
1N 6 0
Vl =3V f=30MHz
CL=10PF RL=3.8K
IF=IR=10m A trr=1m A ,R L=100
Min.
Value
Ty p.
0 .3 2
0 .6 5
Max.
0 .5
1 .0
UNITS
V
0.1 0.5
A
2 pF
6 0 .0
%
1 ns
400
www.galaxycn.com
Document Number 0265003
BLGALAXY ELECTRICAL
1.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| 1N60 | GOLD BONDED GERMANIUM DIODE | ETC |
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| 1N60 | Germanium Glass Diodes |  International Semiconductor |
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