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DE150-201N09A の電気的特性と機能

DE150-201N09AのメーカーはDirected Energyです、この部品の機能は「RF Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 DE150-201N09A
部品説明 RF Power MOSFET
メーカ Directed Energy
ロゴ Directed Energy ロゴ 




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DE150-201N09A Datasheet, DE150-201N09A PDF,ピン配置, 機能
Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE150-201N09A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
200 V
9.0 A
0.4
Symbol Test Conditions
Maximum Ratings
PDHS
=
80W
VDSS
www.DataSheet4U.coVmDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
200 V
TJ = 25°C to 150°C; RGS = 1 M
200 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
9.0 A
Tc = 25°C, pulse width limited by TJM
54 A
Tc = 25°C
9.0 A
Tc = 25°C
7.5 mJ
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
5 V/ns
>200 V/ns
80 W GATE
3.5 W
DRAIN
-55…+150
150
°C
°C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150
300
2
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VGS = 0 V, ID = 3 ma
200
V
VDS = VGS, ID = 4 ma
2 3 4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
0.4
VDS = 15 V, ID = 0.5ID25, pulse test
3.0 5.0
S
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density

1 Page





DE150-201N09A pdf, ピン配列
Directed Energy, Inc.
An IXYS Company
DE150-201N09A
RF Power MOSFET
201N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod-
eled with reversed biased diodes. This provides a varactor type response nec-
essary for a high power device model. The turn on delay and the turn off delay
are adjusted via Ron and Roff.
www.DataSheet4U.com
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
*SYM=POWMOSN
.SUBCKT 201N09 10 20 30
* TERMINALS: D G S
* 200 Volt 9 Amp .4 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .6N
RD 4 1 .4
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=2.7)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0241 Rev 1
© 2001 Directed Energy, Inc.
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Web: http://www.directedenergy.com


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部品番号部品説明メーカ
DE150-201N09A

RF Power MOSFET

Directed Energy
Directed Energy


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