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LD1014D の電気的特性と機能

LD1014DのメーカーはLovoltechです、この部品の機能は「High Performance N-Channel POWERJFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 LD1014D
部品説明 High Performance N-Channel POWERJFET
メーカ Lovoltech
ロゴ Lovoltech ロゴ 




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LD1014D Datasheet, LD1014D PDF,ピン配置, 機能
PWRLITE LD1014D
High Performance N-Channel POWERJFETTM with PN Diode
Features
™ Superior gate charge x Rdson product (FOM)
™ Trench Power JFET with low threshold voltage Vth.
™ Device fully “ON” with Vgs = 0.7V
™ Optimum for “Low Side” Buck Converters
™ Excellent for high frequency dc/dc converters
www.DataSheet4™U.cOopmtimized for Secondary Rectification in isolated DC-DC
™ Low Rg and low Cds for high speed switching
Applications
™ DC-DC Converters
™ Synchronous Rectifiers
™ PC Motherboard Converters
™ Step-down power supplies
™ Brick Modules
™ VRM Modules
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
DPAK Lead-free Pin Assignments
D
GS
Pin Definitions
Pin Number Pin Name Pin Function Description
1 Gate Gate. Transistor Gate
2 Drain Drain. Transistor Drain
3 Source Source. Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
D
G
S
N – Channel Power JFET
with PN Diode
VDS (V)
24V
Product Summary
Rdson ()
0.0065
Symbol
VDS
VGS
VGD
ID
ID
EAS
TJ
TSTG
T
PD
Ratings
24
-12
-28
501
100
200
-55 to 150°C
-65 to 150°C
260°C
69
ID (A)
501
Units
V
V
V
A
A
mJ
°C
°C
°C
W
LD1014D Rev 1.05 03-05

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LD1014D pdf, ピン配列
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
8
7
6
5
4
www.DataSheet4U.co3m
2
1.0E-05
1.0E-04
1.0E-03
IG(A)
1.0E-02
1.0E-01
Figure 1 – RDSON vs Gate Current at ID – 10A
50
45
40
35
30
25
20
15
10
5
0
0
5 10 15 20 25
V D S (V )
Figure 3 – Breakdown Voltage Vds vs Id
30
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.00
0.20
0.40
VGS(V)
0.60
Figure 5 – IG vs Gate Voltage VGS
0.80
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
1
LD1014D, Qg vs Vgs, VDS=0.1V.
3 5 7 9 11 13 15
Qg(nC)
Figure 2 – Gate Charge Qgsync for VDS=0.1V
1600
1400
1200
1000
800
600
400
200
0
0
LD1014D Capacitance vs. Vds, Vgs=-5v
Ciss
Coss
Crss
5 1100 1155 2200
Vds (volts)
2255
Figure 4 – Capacitance vs Drain Voltage Vds
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-5
ID vs VGS, VDS=12V and VDS=0.1V
VDS = 12V
VDS = 0.1V
-4 -3 -2 -1 0
VGS(V)
1
Figure 6 – Transfer Characteristic
LD1014D
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
3
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification


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部品番号部品説明メーカ
LD1014D

High Performance N-Channel POWERJFET

Lovoltech
Lovoltech


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