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W20NM50FDのメーカーはSTMicroelectronicsです、この部品の機能は「STW20NM50FD」です。 |
部品番号 | W20NM50FD |
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部品説明 | STW20NM50FD | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとW20NM50FDダウンロード(pdfファイル)リンクがあります。 Total 8 pages
STW20NM50FD
N-CHANNEL 500V - 0.22Ω - 20A TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
VDSS
RDS(on)
ID
STW20NM50FD
500V
<0.25Ω
20 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
APPLICATIONS
s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2002
Value
500
500
±30
20
14
80
214
1.42
20
–65 to 150
150
(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8
1 Page ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 10 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 400V, ID = 20A,
VGS = 10V
Qgd Gate-Drain Charge
www.DataSheet4US.cWomITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 60V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW20NM50FD
Min.
Typ.
22
20
38
18
10
Max.
53
Unit
ns
ns
nC
nC
nC
Min.
Typ.
6
15
30
Max.
Unit
ns
ns
ns
Min.
Typ.
245
2
16
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
3Pages STW20NM50FD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ W20NM50FD データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
W20NM50FD | STW20NM50FD | STMicroelectronics |