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G4PC40W の電気的特性と機能

G4PC40WのメーカーはIRFです、この部品の機能は「IRG4PC40W」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PC40W
部品説明 IRG4PC40W
メーカ IRF
ロゴ IRF ロゴ 




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G4PC40W Datasheet, G4PC40W PDF,ピン配置, 機能
PD -91656C
IRG4PC40W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
www.DataSheet4U.com Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000

1 Page





G4PC40W pdf, ピン配列
IRG4PC40W
www.DataSheet4U.com
50
40
30
S q u a re wave :
60 % of rated
vo lta g e
20
For both:
D u ty c y c le : 5 0 %
TJ = 12 5° C
Ts ink = 90°C
G at e d riv e as sp ec ifie d
Po w er D iss ip ation = 2 8 W
Trian gu lar w a ve :
C la m p vo lta g e:
80% of rated
10
Ideal diodes
0
0.1 1 10 100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
A
1000
1000
TJ = 25 °C
100
TJ = 150 °C
10
VGE = 15V
80µs PULSE WIDTH
1
1.0 2.0 3.0 4.0 5.0
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
TJ = 150 °C
10 TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 7 9 11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PC40W 電子部品, 半導体
IRG4PC40W
2.0 RG =1100Ohm
T J = 150° C
VCC = 480V
VGE = 15V
1.5
www.DataSheet4U.com
1.0
0.5
0.0
5
15 25 35
I C , Collector-to-emitter Current (A)
45
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE = 20V
T J = 125 oC
100
SAFE OPERATING AREA
10
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
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