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PDF MS2176 Data sheet ( Hoja de datos )

Número de pieza MS2176
Descripción RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Fabricantes Advanced Power Technology 
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No Preview Available ! MS2176 Hoja de datos, Descripción, Manual

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
Features
350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY
www.DataSheeCt4YU.CcoLmE
300 WATTS @ 250µSEC PULSE WIDTH 10% DUTY
CYCLE
9.5 DB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
INFINITE VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
DESCRIPTION:
The MS2176 is a gold metallized silicon NPN pulse power transistor
designed for applications requiring high peak power and low duty
cycles within the frequency range of 400 – 500 MHz.
MS2176
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
Value
65
65
3.5
21.6
875
+200
-65 to +150
Unit
V
V
V
A
W
°C
°C
0.2 °C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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MS2176 pdf
TYPICAL PERFORMANCE (CONTINUED)
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MS2176
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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