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PDF IRF654A Data sheet ( Hoja de datos )
| Número de pieza | IRF654A | |
| Descripción | Advanced Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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Advanced Power MOSFET
IRF654A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V
♦ Low RDS(ON) : 0.108 Ω (Typ.)
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Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 250 V
RDS(on) = 0.14 Ω
ID = 21 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
250
21
13.3
84
±30
551
21
15.6
4.8
156
1.25
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
°C/W
1
1 page  
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF654A
* Current Regulator ”
50KΩ
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
10V
Qgs
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3mA
DUT
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF654A.PDF ] | |
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