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F7811WのメーカーはInternational Rectifierです、この部品の機能は「 IRF7811W」です。 |
部品番号 | F7811W |
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部品説明 | IRF7811W | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとF7811Wダウンロード(pdfファイル)リンクがあります。 Total 6 pages
PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
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S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS
RDS(on)
Q
G
Qsw
Qoss
IRF7811W
9.0mΩ
18nC
5.5nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/13/01
1 Page IRF7811W
2.0 ID = 15A
www.DataSheet4U.com
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 1. Normalized On-Resistance
Vs. Temperature
6.0
ID= 15A
VDS = 16V
4.0
2.0
0.0
0
4 8 12 16
QG, Total Gate Charge (nC)
20
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.020
0.015
0.010
ID = 15A
0.005
3.5
4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate -to -Source Voltage (V)
7.0
Fig 3. On-Resistance Vs. Gate Voltage
www.irf.com
4000
3000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
3Pages IRF7811W
SO-8 Tape and Reel
TER M INA L NU M BE R 1
www.DataSheet4U.com
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F E E D D IRE C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N FO R M S T O E IA -4 81 & E IA -5 41 .
33 0 .0 0
( 1 2 .9 92 )
MAX.
NOTES :
1. CO N TR O LLIN G D IM EN SIO N : M ILLIM ET ER.
2. OU TLIN E C O N FO R M S TO EIA-481 & EIA -541.
14.40 ( .566 )
12.40 ( .488 )
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
6 www.irf.com
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部品番号 | 部品説明 | メーカ |
F7811W | IRF7811W | International Rectifier |