DataSheet.jp

F7811W の電気的特性と機能

F7811WのメーカーはInternational Rectifierです、この部品の機能は「 IRF7811W」です。


製品の詳細 ( Datasheet PDF )

部品番号 F7811W
部品説明 IRF7811W
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとF7811Wダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

F7811W Datasheet, F7811W PDF,ピン配置, 機能
PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
www.DataSheet4U.com
S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS…
RDS(on)
Q
G
Qsw
Qoss
IRF7811W
9.0m
18nC
5.5nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/13/01

1 Page





F7811W pdf, ピン配列
IRF7811W
2.0 ID = 15A
www.DataSheet4U.com
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 1. Normalized On-Resistance
Vs. Temperature
6.0
ID= 15A
VDS = 16V
4.0
2.0
0.0
0
4 8 12 16
QG, Total Gate Charge (nC)
20
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.020
0.015
0.010
ID = 15A
0.005
3.5
4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate -to -Source Voltage (V)
7.0
Fig 3. On-Resistance Vs. Gate Voltage
www.irf.com
4000
3000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3


3Pages


F7811W 電子部品, 半導体
IRF7811W
SO-8 Tape and Reel
TER M INA L NU M BE R 1
www.DataSheet4U.com
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F E E D D IRE C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N FO R M S T O E IA -4 81 & E IA -5 41 .
33 0 .0 0
( 1 2 .9 92 )
MAX.
NOTES :
1. CO N TR O LLIN G D IM EN SIO N : M ILLIM ET ER.
2. OU TLIN E C O N FO R M S TO EIA-481 & EIA -541.
14.40 ( .566 )
12.40 ( .488 )
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
6 www.irf.com

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ F7811W データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
F7811W

IRF7811W

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap