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PDF HL7852G Data sheet ( Hoja de datos )
| Número de pieza | HL7852G | |
| Descripción | GaA1As Laser Diode | |
| Fabricantes | Opnext | |
| Logotipo |  |
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HL7852G
GaAlAs Laser Diode
ODE-208-063A (Z)
Rev.1
Dec. 04, 2006
Description
The HL7852G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
Features
• Visible light output: λp = 785 nm Typ
• Small beam ellipticity: 9.5:23
www.DataS•heeHti4gUh o.cuotpmut power: 50 mW (CW)
• Built-in monitor photodiode
Package Type
• HL7852G: G2
Internal Circuit
13
PD LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Maximum 50% duty cycle, maximum 1 µs pulse width.
Ratings
50
60 *
2
30
–10 to +60
–40 to +85
2
(TC = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Threshold current
Slope efficiency
LD Operating current
LD Operating voltage
Lasing wavelength
Beam divergence (parallel)
Beam divergence
(perpendicular)
Monitor current
Astigmatism
Symbol
Ith
ηs
IOP
VOP
λp
θ//
θ⊥
IS
AS
Min
—
0.35
—
—
775
8
18
25
—
Typ
45
0.55
135
2.3
785
9.5
23
45
5
Max
70
0.7
165
2.7
795
12
28
150
—
Unit
mA
mW/mA
mA
V
nm
°
°
(TC = 25°C)
Test Conditions
40 (mW) / (I(45mW) – I(5mW))
PO = 50 mW
PO = 50 mW
PO = 50 mW
PO = 50 mW, FWHM
PO = 50 mW, FWHM
µA PO = 5 mW, VR(PD) = 5 V
µm PO = 5 mW, NA = 0.4
Rev.1 Dec. 04, 2006 page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HL7852G.PDF ] | |
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