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PDF STD3NM50 Data sheet ( Hoja de datos )
| Número de pieza | STD3NM50 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STD3NM50
STD3NM50-1
N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STD3NM50
www.DataSheet4U.cSoTmD3NM50-1
500V
500V
<3Ω
<3Ω
3A
3A
s TYPICAL RDS(on) = 2.5 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
500
500
±30
3
1.89
12
46
4
0.37
15
–65 to 150
150
(1)ISD<3A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
Unit
V
V
V
A
A
A
W
KV
W/°C
V/ns
°C
°C
1/10
1 page  
Gate Charge vs Gate-source Voltage
STD3NM50/STD3NM50-1
Capacitance Variations
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVdss vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD3NM50.PDF ] | |
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