DataSheet.jp

K3562 の電気的特性と機能

K3562のメーカーはToshiba Semiconductorです、この部品の機能は「MOSFET ( Transistor ) - 2SK3562」です。


製品の詳細 ( Datasheet PDF )

部品番号 K3562
部品説明 MOSFET ( Transistor ) - 2SK3562
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




このページの下部にプレビューとK3562ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

K3562 Datasheet, K3562 PDF,ピン配置, 機能
2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.comMaximum Ratings (Ta = 25°C)
www.DataSheet4U.com
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
600
600
±30
6
24
40
345
6
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1 2004-07-01

1 Page





K3562 pdf, ピン配列
www.DataSheet4U.com
5
COMMON
SOURCE
Tc = 25°C
4 PULSE TEST
ID – VDS
15 10
6
5
4.8
3
4.6
4.4
2
4.2
1
VGS = 4 V
0
0 2468
DRAIN-SOURCE VOLTAGE VDS
10
(V)
2SK3562
10
10,15
8
ID – VDS
5.2
5
COMMON SOURCE
Tc = 25°C
PULSE TEST
6 4.8
4.6
4
4.4
2 4.2
VGS = 4 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VGS
10
COMMON SOURCE
8 VDS = 20 V
PULSE TEST
6
4
Tc = −55°C
2 100
25
0
0 2 46 8
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
10
COMMON SOURCE
Tc = 25
8 PULSE TEST
6
ID = 6 A
4
23
1.5
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
Yfs– ID
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
1 10
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V15V
0.1
0.1 1 10
DRAIN CURRENT ID (A)
3 2004-07-01


3Pages


K3562 電子部品, 半導体
2SK3562
www.DataSheet4U.com
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6 2004-07-01

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ K3562 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
K3561

MOSFET ( Transistor ) - 2SK3561

Toshiba Semiconductor
Toshiba Semiconductor
K3562

MOSFET ( Transistor ) - 2SK3562

Toshiba Semiconductor
Toshiba Semiconductor
K3562M

IF Filter

EPCOS
EPCOS
K3563

MOSFET ( Transistor ) - 2SK3563

Toshiba Semiconductor
Toshiba Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap