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PDF MS2472 Data sheet ( Hoja de datos )
| Número de pieza | MS2472 | |
| Descripción | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MS2472 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2472
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF AND DME
www.DataSheeAt4PU.PcoLmICATIONS
• 600 W (typ.) IFF 1030 – 1090 MHz
• 550 W (min.) DME 1025 – 1150 MHz
• 1025 - 1150 MHz
• POUT = 550 WATTS
• GP = 5.6 dB MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT/OUTPUT MATCHED
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2472 is a hermetically sealed, gold metallized, silicon
NPN power transistor. The MS2472 is designed for applications
requiring high peak power and low duty cycles such as IFF and DME.
The MS2472 is internal input/output matched resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
VCES
VEBO
IC
PDISS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
Value
65
65
3.5
40
1350
200
-65 to +150
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.06
Unit
V
V
V
A
W
ºC
ºC
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MS2472.PDF ] | |
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